High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3264961
Reference12 articles.
1. GaN Electronics
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3. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures
4. Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier
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