Intersubband resonant enhancement of second order-nonlinear susceptibility in asymmetric AlxGa1−xN/GaN double quantum wells
Author:
Affiliation:
1. Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir, Tunisia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5110176
Reference71 articles.
1. Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells
2. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
3. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
4. Intersubband relaxation dynamics inGaN∕AlNmultiple quantum wells studied by two-color pump-probe experiments
5. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells
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1. A Study of Second‐Order Susceptibility in Digital Alloy‐Grown InAs/AlSb Multiple Quantum Wells;Advanced Optical Materials;2022-05-02
2. Evaluation of second harmonic generation susceptibility in a delta-doped AlGaAs/GaAs asymmetric Gaussian potential;Micro and Nanostructures;2022-03
3. Carrier screening effects on intersubband nonlinear optical rectification in wurtzite InGaN/GaN coupling quantum wells;Solid State Communications;2022-02
4. Theoretical analysis of intersubband optical absorption in asymmetric AlInN/GaN/AlInN quantum well heterostructures;Optik;2021-12
5. Efficient third-harmonic generation in asymmetric InxGa1-xN/InN double quantum wells;Journal of Applied Physics;2021-09-07
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