Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505116
Reference9 articles.
1. All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
2. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
3. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
4. Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
5. Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers
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