Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2746417
Reference18 articles.
1. GaN, AlN, and InN: A review
2. Shortest wavelength semiconductor laser diode
3. The Polarity of GaN: a Critical Review
4. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
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