Simulation of Life Testing Procedures for Estimating Long-Term Degradation and Lifetime of AlGaN/GaN HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/4631377/04631392.pdf?arnumber=4631392
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Device-level modeling and simulation of AlGaN/GaN HEMTs;Thermal Management of Gallium Nitride Electronics;2022
2. Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings;ACS Applied Materials & Interfaces;2021-08-27
3. Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics;Journal of Electronic Packaging;2020-05-21
4. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor;Applied Physics Letters;2019-10-07
5. Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods;Journal of Thermal Analysis and Calorimetry;2017-03-15
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