Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor-Reference-Cited by-同舟云学术

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Published:2019-10-07 Issue:15 Volume:115 Page:153503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lundh James Spencer¹^ORCID,Chatterjee Bikramjit¹^ORCID,Song Yiwen¹,Baca Albert G.²^ORCID,Kaplar Robert J.²^ORCID,Beechem Thomas E.²,Allerman Andrew A.²,Armstrong Andrew M.²^ORCID,Klein Brianna A.²,Bansal Anushka³^ORCID,Talreja Disha³,Pogrebnyakov Alexej³^ORCID,Heller Eric⁴^ORCID,Gopalan Venkatraman³,Redwing Joan M.³^ORCID,Foley Brian M.¹,Choi Sukwon¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

3. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

4. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)