A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces-Reference-Cited by-同舟云学术

A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces

Published:2023-06-16 Issue:25 Volume:15 Page:29655-29673
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Feng Tianli¹^ORCID,Zhou Hao¹^ORCID,Cheng Zhe²,Larkin Leighann Sarah³,Neupane Mahesh R.³

Affiliation:

1. Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah 84112, United States

2. School of Integrated Circuits and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China

3. Army Research Directorate (ARD), DEVCOM Army Research Laboratory, Adelphi, Maryland 20708, United States

Funder

University of Utah

Peking University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c02507

Reference180 articles.

1. Margaret, M.; Vicky, P. Semiconductor Supply Chain Deep Dive Assessment. U.S. Department of Energy Response to Executive Order 14017; America’s Supply Chains, 2022.

2. Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

3. Self-heating in high-power AlGaN-GaN HFETs

4. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

5. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

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