Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures

Abstract

Determining junction temperature and two-dimensional temperature profile is critical for high-power GaN-based high electron mobility transistors to optimize performance, improve device reliability, and better thermal management. Here, we have demonstrated that resistance temperature detectors of the same material as the gate contact delineated between gate-to-source and gate-to-drain regions can accurately profile the temperature along the channel. The temperature profile is asymmetric and skewed toward the drain side, and the degree of asymmetry is used to determine the effective gate length experimentally. A two-dimensional thermodynamic model along with drift-diffusion transport matches well with the experimental data, validating the temperature profile and effective channel length extraction under bias. The vertical depth profiling of the temperature is also determined by identifying the isothermal profile through the resistance temperature detectors. The isothermal lines are largely circular in the GaN region from isotropic two-dimensional heat diffusion, with the pinch-off region acting as a heating filament. The isothermal circular profile turns elliptical in the SiC substrate due to its higher thermal conductivity.