Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365963
Reference19 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition
3. GaN, AlN, and InN: A review
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
5. Emerging gallium nitride based devices
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