A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors

Published:2024-10 Issue: Volume:220 Page:108991
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jiang Guangyuan,Fu Chen,Liu Yang,Yang Guang,Cui Peng,Zhang Guangyuan,Lv Yuanjie,Lin Zhaojun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference34 articles.

1. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior;Saito;IEEE Trans Electron Devices,2003

2. A 10-W high-power amplifier using input nonlinearity for K-Band satcom applications;Yi;IEEE Microwave Wirel Compon Lett,2022

3. High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology;Lu;IEEE Electron Device Lett,2018

4. The 1.6-kV AlGaN/GaN HFETs;Tipirneni;IEEE Electron Device Lett,2006

5. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation;Kuzuhara;Jpn J Appl Phys,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors;Micromachines;2024-09-13

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