In-plane imperfections in GaN studied by x-ray diffraction-Reference-Cited by-同舟云学术

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In-plane imperfections in GaN studied by x-ray diffraction

Published:2005-05-06 Issue:10A Volume:38 Page:A99-A104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Vickers M E,Kappers M J,Datta R,McAleese C,Smeeton T M,Rayment F D G,Humphreys C J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=10A/a=019/pdf

Reference17 articles.

1. Growth and characterisation of GaN with reduced dislocation density

2. Mosaic structure in epitaxial thin films having large lattice mismatch

3. X-ray diffraction analysis of the defect structure in epitaxial GaN

4. Direct measurement of twist mosaic in GaN epitaxial films as a function of growth temperature

5. Direct measurement of twist mosaic in epitaxial GaN

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