Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates-Reference-Cited by-同舟云学术

Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates

Published:2024 Issue:5 Volume:26 Page:620-630
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Pan Zuojian¹^ORCID,Chen Zhizhong¹²³^ORCID,Chen Yiyong¹^ORCID,Zhang Haodong¹,Yang Han¹,Hu Ling¹,Kang Xiangning¹,Yuan Ye⁴,Jia Chuanyu⁵,Liang Zhiwen²,Wang Qi²,Zhang Guoyi¹²,Shen Bo¹³

Affiliation:

1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong 523808, China

3. Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu 226000, China

4. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

5. School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan, Guangdong 523808, China

Abstract

The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D3CE00987D

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