Growth and characterisation of GaN with reduced dislocation density
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
2. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
3. The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
4. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
5. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
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1. Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity;Journal of Magnetism and Magnetic Materials;2023-08
2. Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-15
3. Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity;Applied Materials Today;2020-12
4. Device quality templates of InxGa1−xN (x < 0.1) with defect densities comparable to GaN;Applied Physics Letters;2020-08-03
5. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN;Journal of Alloys and Compounds;2019-04
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