Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence-Reference-Cited by-同舟云学术

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Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Published:2002-09-09 Issue:11 Volume:81 Page:1940-1942
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Koleske D. D.,Fischer A. J.,Allerman A. A.,Mitchell C. C.,Cross K. C.,Kurtz S. R.,Figiel J. J.,Fullmer K. W.,Breiland W. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1506793

Reference17 articles.

1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

2. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

3. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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2. Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers;Journal of Crystal Growth;2020-03

3. Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy;Journal of Crystal Growth;2019-10

4. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes;Applied Surface Science;2019-03

5. Study of recombination characteristics in MOCVD grown GaN epi-layers on Si;Semiconductor Science and Technology;2017-11-16

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