Relationship Between Interface State and Dislocation Densities of Ag/TiO2/n-InP/Au Schottky Diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s13538-022-01244-y.pdf
Reference31 articles.
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2. S.O. Tan, H. Tecimer, O. Çiçek, Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes. IEEE Trans. Electron Devices 64(3), 984–990 (2017). https://doi.org/10.1109/TED.2016.2647380
3. D.E. Yıldız, A. Karabulut, İ Orak et al., Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode. J. Mater. Sci: Mater. Electron. 32, 10209–10223 (2021). https://doi.org/10.1007/s10854-021-05676-1
4. F. Güzelçimen, B. Tanören, Ç. Çetinkaya, M.D. Kaya, H.İ. Efkere, Y. Özen, D. Bingöl, M. Sirkeci, B. Kınacı, M.B. Ünlü, S. Özçelik, The effect of thickness on surface structure of rf sputtered TiO2 thin films by XPS, SEM/EDS, AFM and SAM, Vacuum. 182. https://doi.org/10.1016/j.vacuum.2020.109766
5. K. Ejderha, N. Yildirim, A. Turut, B. Abay, Influence of interface states on the temperature dependence and current-voltage characteristics of ni/p-inp schottky diodes. Superlattices Microstruct. 47(2), 241–252 (2010)
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