Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference59 articles.
1. Characteristics of Al / p-AgGaTe2 polycrystalline thin film Schottky barrier diode
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4. Electrical and photoelectrical characterizations of isotype GaAs15P85/GaP heterojunctions prepared by liquid phase epitaxy
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