Annealing effects on the structure and electrical characteristics of amorphous Er 2 O 3 films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
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1. Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector;Nano Express;2024-07-10
2. Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor;Journal of Materials Science: Materials in Electronics;2020-04-28
3. Effects of rare-earth erbium doping on the electrical performance of tin-oxide thin film transistors;Journal of Alloys and Compounds;2019-06
4. Thermal Stability of Er2O3–Al2O3 Thin Films Grown on Si Substrates;Advanced Functional Materials;2018
5. In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy;Superlattices and Microstructures;2017-04
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