GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749840
Reference15 articles.
1. New anodic native oxide of GaAs with improved dielectric and interface properties
2. Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface
3. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
4. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
5. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization
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