Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1767604
Reference15 articles.
1. Band offsets of wide-band-gap oxides and implications for future electronic devices
2. Characterization and control of the HfO2/Si(001) interfaces
3. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
4. Structural and optical modification in hafnium oxide thin films related to the momentum parameter transferred by ion beam assistance
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