Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers-Reference-Cited by-同舟云学术

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Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

Published:2007-05-14 Issue:20 Volume:90 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Oh Jungwoo,Majhi Prashant,Kang Chang Yong,Yang Ji-Woon,Tseng Hsing-Huang,Jammy Raj

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2740108

Reference19 articles.

1. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

2. Surface oxidation states of germanium

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1. Dipole formation to modulate flatband voltage using ALD Al2O3 and La2O3 at the interface between HfO2 and Si or Ge substrates;Applied Surface Science;2023-01

2. Influence of Ti doping on the band gap and thermal stability of ultrathin GeO x films;Journal of Physics D: Applied Physics;2021-06-10

3. Improving Thermal Stability and Interface State Density of High- $\kappa $ Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium;IEEE Electron Device Letters;2016-11

4. Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface;Semiconductor Science and Technology;2016-06-13

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