Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2402215
Reference14 articles.
1. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
2. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
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1. Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film;Thin Solid Films;2011-05
2. Effect of Rapid Thermal Annealing on Structural and Electrical Characteristics of Ni-Al-O Gate Dielectrics;Journal of Inorganic Materials;2011-03-10
3. Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature;Open Physics;2010-01-01
4. Annealing effects on the structure and electrical characteristics of amorphous Er 2 O 3 films;Chinese Physics B;2009-07-31
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