In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy

Published:2017-04 Issue: Volume:104 Page:415-421
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Gao Baolong,Mamat Mamatrishat,Ghupur Yasenjan,Ablat Abduleziz,Ibrahim Kurash,Wang Jiaou,Liu Chen,Zhao Jiali

Funder

National Natural Science Foundation of China

Technological Innovation Youth Training Project of Xinjiang Uyghur Autonomous Region of China

University Research Project of Xinjiang Uyghur Autonomous Region

Doctoral Startup Foundation of Xinjiang University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon

2. Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films

3. Dielectric properties of I-III-VI2-type chalcopyrite semiconductors

4. Characterisation of oxidised erbium films deposited on Si(100) substrates

5. Optical constants of Er2O3-Al2O3 films studied by spectroscopic ellipsometry

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reinforced near-infrared compatible absorption performance of Er4Al2O9 based on Sm3+/Dy3+ co-doping;Journal of Materials Science: Materials in Electronics;2023-03

2. Application convenient and energy-saving mechano-optics of Er³⁺-doped X₂O₂S (X = Y/Lu/Gd) for thermometry;Journal of Materials Chemistry C;2023

3. Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO₃ Ceramics via Oxygen Vacancy Regulation;ACS Applied Materials & Interfaces;2022-10-20

4. Interface Optimization of Passivated Er2O3/Al2O3/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism;IEEE Transactions on Electron Devices;2021-06

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