Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors-Reference-Cited by-同舟云学术

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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

Published:2010-05 Issue:5 Volume:19 Page:057802
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

De-Gang Zhao,Shuang Zhang,Wen-Bao Liu,Xiao-Peng Hao,De-Sheng Jiang,Jian-Jun Zhu,Zong-Shun Liu,Hui Wang,Shu-Ming Zhang,Hui Yang,Long Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. 320×256 solar-blind focal plane arrays based on AlxGa1−xN

2. Electrical characterization of GaN p-n junctions with and without threading dislocations

3. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

4. Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

5. Leakage mechanism in GaN and AlGaN Schottky interfaces

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photoresponse;ACS Applied Optical Materials;2023-07-28

2. Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes;ACS Applied Materials & Interfaces;2023-03-07

3. A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition;Nanomaterials;2023-01-28

4. AlGaN Epitaxial Technology;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

5. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas;Applied Physics Letters;2013-12-23

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