Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes-Reference-Cited by-同舟云学术

Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Published:2023-03-07 Issue:10 Volume:15 Page:13343-13352
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liao Yikai¹,Kim You Jin¹,Lai Junyu²,Seo Jung-Hun²^ORCID,Kim Munho¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

2. Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c22929

Reference70 articles.

1. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

3. Gallium Nitride –Based Photodiode: A review

4. Anti-reflective coatings: A critical, in-depth review

5. Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

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