GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photoresponse-Reference-Cited by-同舟云学术

GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photoresponse

Published:2023-07-28 Issue:8 Volume:1 Page:1485-1491
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Liu Hangzan¹,Wang Yu¹,Liu Chuankai¹,Gao Wei¹^ORCID,Han Lixiang¹^ORCID,Wang Xiaozhou²,Li Jingbo³

Affiliation:

1. Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China

2. Zhejiang Xinke Semiconductor Company Limited, Hangzhou 311400, China

3. College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China

Funder

Guangdong Provincial Pearl River Talents Program

Guangzhou Municipal Science and Technology Project

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.3c00200

Reference36 articles.

1. 2D material broadband photodetectors

2. Controlling Defects in Continuous 2D GaS Films for High‐Performance Wavelength‐Tunable UV‐Discriminating Photodetectors

3. A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO2 Photodetector

4. Recent advances in ultraviolet photodetectors

5. Wide-bandgap semiconductor ultraviolet photodetectors

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