p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4858386
Reference27 articles.
1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”
2. Prospects for LED lighting
3. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
4. On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes
5. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
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