Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/7/078102/pdf
Reference25 articles.
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4. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance
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2. Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process;Journal of Applied Physics;2018-11-07
3. Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition;Journal of Crystal Growth;2017-11
4. Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition;Applied Physics Express;2017-07-21
5. Passivation and Characterization in High-k/III–V Interfaces;Outlook and Challenges of Nano Devices, Sensors, and MEMS;2017
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