Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3584862
Reference23 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Mobility enhancement in strained p-InGaSb quantum wells
3. The physics and technology of gallium antimonide: An emerging optoelectronic material
4. An improved In-based ohmic contact to n-GaSb
5. Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy
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