An improved In-based ohmic contact to n-GaSb-Reference-Cited by-同舟云学术

An improved In-based ohmic contact to n-GaSb

Published:2004-09 Issue:9 Volume:48 Page:1667-1672
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Robinson J.A,Mohney S.E

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. The physics and technology of gallium antimonide: an emerging optoelectronic material;Dutta;J. Appl. Phys.,1997

2. Ternary and quaternary antimonide devices for thermophotovoltaic applications;Hitchcock;J. Cryst. Growth,1998

3. Ohmic contacts of AuGeNi and Ag/AuGeNi to n-GaSb with various sintering temperatures;Su;Jpn. J. Appl. Phys.,1991

4. Godoy Von Zuben AA, Herrera-Perez JL, Morosini MBZ, Patel NB. Low resistance ohmic contacts to GaSb. 5th Brazilian School Semiconductor Physics, 1992. p. 400–4

5. Ohmic contacts to p- and n-type GaSb;Heinz;Int. J. Electron.,1983

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