Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb-Reference-Cited by-同舟云学术

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Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

Published:2013-12 Issue:6 Volume:1 Page:062105
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Rahimi Nassim,Aragon Andrew A.,Romero Orlando S.,Shima Darryl M.,Rotter Thomas J.,Mukherjee Sayan D.,Balakrishnan Ganesh,Lester Luke F.

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4842355

Reference24 articles.

1. The physics and technology of gallium antimonide: An emerging optoelectronic material

2. Ternary and quaternary antimonide devices for thermophotovoltaic applications

3. InAs/GaSb superlattice infrared detectors

4. III-V compounds for solar cell applications

5. Advanced III–V solar cell structures grown by MOVPE

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1. A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations;Materials;2021-08-30

2. Ohmic contacts to n-type and p-type gallium antimonide whiskers;Computational Problems of Electrical Engineering;2021-04-25

3. Effects of dry needling on symptomatic hallux valgus: A randomized single blind clinical trial;Journal of Bodywork and Movement Therapies;2020-07

4. Interfacial Characterization and Electrical Properties of Co/GaSb Contacts;Materials Science Forum;2018-08

5. Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application;Applied Physics Letters;2017-10-16

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