Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers-Reference-Cited by-同舟云学术

Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers

Author:

Hao Lin¹,He Gang¹²^ORCID,Zheng Ganhong¹,Gao Qian¹,Qiao Lesheng¹,Fang Zebo³

Affiliation:

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China

2. Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China

3. School of Mathematical Information, Shaoxing University, Shaoxing 312000, China

Funder

Anhui University

National Natural Science Foundation of China

Institute of Physical Science and Information Technology, Anhui University

Provincial Natural Science Research Program of Higher Education Institutions of Anhui Province

Natural Science Research Project of Colleges and Universities in Anhui Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference54 articles.

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