Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=8/a=086501/pdf
Reference20 articles.
1. Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules
2. Approaching the Hole Mobility Limit of GaSb Nanowires
3. InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
4. Scaling projections for Sb-based p-channel FETs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancing the Thermal Stability of GaSb Schottky-Barrier MOSFET With Pt Source/Drain;IEEE Electron Device Letters;2018-07
2. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition;Applied Physics Express;2018-04-17
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