Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition
Author:
Funder
Ministry of Science and Technology, Taiwan
Chung-Shan Institute of Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=5/a=051202/pdf
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1. p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb
2. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
3. AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
4. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors
5. Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
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