Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. InAs HEMT narrowband amplifier with ultra-low power dissipation
3. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
4. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
5. Electron and hole effective masses for two-dimensional transport in strained-layer superlattices
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2. Quantum transport simulation of the two-dimensional GaSb transistors;Journal of Semiconductors;2021-12-01
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