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InAs HEMT narrowband amplifier with ultra-low power dissipation

Published:2006 Issue:12 Volume:42 Page:688
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Kruppa W.,Boos J.B.,Bennett B.R.,Papanicolaou N.A.,Park D.,Bass R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20061107?crawler=true&mimetype=application/pdf

Reference5 articles.

1. AlSb/InAs HEMT's for low-voltage, high-speed applications

2. Antimonide-based compound semiconductors for electronic devices: A review

3. High radiation tolerance of InAs∕AlSb high-electron-mobility transistors

4. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

5. A W-band InAs/AlSb low-noise/low-power amplifier

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1. The HUP and the ES in Quantum Wells (QWs) of HD Non-parabolic Materials;Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures;2022

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3. The Charge-Based Flicker Noise Model for HEMTs;IEEE Microwave and Wireless Components Letters;2021

4. 1. Heisenberg’s uncertainty principle (HUP) and the carrier contribution to the elastic constants in heavily doped (HD) optoelectronic nanomaterials in the presence of intense light waves;Nanomaterials;2018-11-05

5. Influence of Size Quantization on the Screening Length in Non-Parabolic Semiconductors;Materials Focus;2018-06-01

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