A low specific on-resistance SOI LDMOS with a novel junction field plate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/7/077306/pdf
Reference16 articles.
1. Breakdown Voltage and On-Resistance of the Multi-resurf SOI LDMOSFET with Recessed Source
2. Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping
3. Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance
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1. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*;Chinese Physics B;2019-05-01
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3. Novel silicon-on-insulator lateral power device with step width drift region;Superlattices and Microstructures;2015-09
4. A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance;Chinese Physics Letters;2015-09
5. New super junction lateral double-diffused MOSFET with electric field modulation by differently doping the buffered layer;Acta Physica Sinica;2014
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