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Novel silicon-on-insulator lateral power device with step width drift region

  • Published:2015-09 Issue: Volume:85 Page:173-179
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Yao Jia-fei,Guo Yu-feng,Zhang Jun,Lin Hong,Xia Xiao-juan

Funder

Specialized Research Fund for the Doctoral Program of Higher Education of China

Natural Science Foundation of Jiangsu Province

National Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Injected charges in partial SOI LDMOSFETs: a new technique for improving the breakdown voltage;Mehrad;Superlattices Microstruct.,2013

2. Improvement of SOI trench LDMOS performance with double vertical metal field plate;Xia;IEEE Trans. Electron Devices,2014

3. Low specific on-resistance power MOSFET with a surface improved super-junction layer;Wu;Superlattices Microstruct.,2014

4. A low specific on-resistance SOI LDMOS with a novel junction field plate;Luo;Chin. Phys. B,2014

5. A new analytical model for optimizing SOI LDMOS with step doped drift region;Guo;Microelectron. J.,2006

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