Injected charges in partial SOI LDMOSFETs: A new technique for improving the breakdown voltage
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
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3. New thin-film power MOSFETs with a buried oxide double step structure;Duan;IEEE Electron. Dev. Lett.,2006
4. Silicon-on-insulator devices for high voltage and power IC applications;Arnold;J. Electrochem. Soc.,1994
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1. Improving Specific On-Resistance and Breakdown Voltage in SOI LDMOSs with Several N-Type Windows;Journal of Electronic Materials;2022-12-06
2. Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide;Silicon;2022-07-05
3. Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage;IET Circuits, Devices & Systems;2021-11-20
4. A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells;Silicon;2021-09-06
5. Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs;IEEE Transactions on Device and Materials Reliability;2021-09
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