Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI-Reference-Cited by-同舟云学术

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Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI

Published:2005-12 Issue: Volume:124-125 Page:323-326
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Xu Hui,Lampin Evelyne,Dubois Emmanuel,Bardy Serge,Murray Franck

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. S. Bardy, S. Dufrenne, Report RNR/CA/0201_05_SB from Philips Semiconductors, Caen, 2001.

2. Accurate modeling of large angle tilt and pure vertical implantations: application to the simulation of n- and p-ldmos backgates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Injected charges in partial SOI LDMOSFETs: A new technique for improving the breakdown voltage;Superlattices and Microstructures;2013-05

2. Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS);Superlattices and Microstructures;2012-03

3. The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel;IEEE Transactions on Electron Devices;2012-02

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