A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01354-3.pdf
Reference35 articles.
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3. Mehrad M (2021) Inserting different charge regions in power MOSFET for achieving high performance of the electrical parameters. Silicon 13(4):1107–1111
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