A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells-Reference-Cited by-同舟云学术

A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells

Published:2021-09-06 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Gavoshani Amir,Dehghan Mostafa,Orouji Ali A.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-021-01354-3.pdf

Reference35 articles.

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3. Mehrad M (2021) Inserting different charge regions in power MOSFET for achieving high performance of the electrical parameters. Silicon 13(4):1107–1111

4. Erlbacher T (2014) Lateral power transistors in integrated circuits. Springer

5. Ramezani Z, Orouji AA (2018) A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects. Int J Electron 105(3):361–374

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