A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/2/027306/pdf
Reference22 articles.
1. Performance and Innovative Trends in RESURF Technology
2. On the static performance of the RESURF LDMOSFETS for power ICs
3. A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer
4. Progressive Development of Superjunction Power MOSFET Devices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*;Chinese Physics B;2019-05-01
2. Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate;Chinese Physics B;2019-03
3. A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer;Results in Physics;2018-09
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