Funder
National Natural Science Foundation of China
Guangxi Natural Science Foundation of China
Subject
General Physics and Astronomy
Reference39 articles.
1. 250 V thin-layer SOI technology with field pLDMOS for high-voltage switching IC;Qiao;IEEE Trans Electron Devices,2015
2. Zhu R, Khemka V, Khan T, Huang W, Cheng X, Hui P, et al. A high voltage Super-Junction NLDMOS device implemented in 0.13 µm SOI based Smart Power IC technology. In: Proc int symp power semicond devices ICs; 2010. p. 79–82.
3. Hara K, Wada S, Sakano J, Oda T. 600 V single chip inverter IC with new SOI technology. In: Proc int symp power semicond devices ICs; 2014. p. 418–21.
4. Improving breakdown voltage performance of SOI power device with folded drift region;Li;Chin Phys B,2016
5. Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film;Nakagawa;IEEE Trans. Electron Devices,2002
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