Double Dielectrics Enhancement on the Ldmos Using High-K Field Dielectric and Low-K Buried Dielectric
Author:
Publisher
Elsevier BV
Subject
General Earth and Planetary Sciences,General Environmental Science
Reference20 articles.
1. A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer;Q Li;Results in Physics,2018
2. Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate;Q Li;Results in Physics,2020
3. Reliability Concerns on LDMOS With Different Split-STI Layout Patterns;R Ye;IEEE Transactions on Electron Devices,2020
4. Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates;J Lei;Results in Physics,2019
5. Partial SOI Power LDMOS With a Variable Low-k Dielectric Buried Layer and a Buried P Layer;X R Luo;IEEE Electron Device Lett,2010
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