Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

Author:

Lei Jianmei,Hu Shengdong,Yang Dong,Huang Ye,Chen Lidong,Guo Jingwei,Liu Chang,Liu Tao,Wang Yuan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference18 articles.

1. High performance p-channel LDMOS transistors and wide-range voltage platform technology using novel p-channel structure;Shimamoto;IEEE Trans Electron Devices,2013

2. Ultra-low specific on-resistance soi high voltage trench ldmos with dielectric field enhancement based on enbulf concept;Zhang,2013

3. Optimization of novel superjunction LDMOS with partial low K layer;LijuanWu;Superlattices Microstruct,2018

4. An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars;Yang;Superlattices Microstruct,2017

5. Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band Diagram;Mehrad;IEEE Trans Electron Devices,2017

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