Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates-Reference-Cited by-同舟云学术

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Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

Published:2019-01 Issue:1 Volume:40 Page:012801
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Yang Tsung-Han,Fu Houqiang,Chen Hong,Huang Xuanqi,Montes Jossue,Baranowski Izak,Fu Kai,Zhao Yuji

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/40/i=1/a=012801/pdf

Reference35 articles.

1. HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

2. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

3. Deep level defects throughout the bandgap of (010) β-Ga2O3detected by optically and thermally stimulated defect spectroscopy

4. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

5. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

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1. Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties;Materials Science and Engineering: B;2024-08

2. Modeling Interface Charges in $\mathrm{A}1_{2}\mathrm{O}_{3}/\text{Ga}_{2}\mathrm{O}_{3}$ Normally-on n-Channel Field Effect Transistors;2024 4th Interdisciplinary Conference on Electrics and Computer (INTCEC);2024-06-11

3. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18

4. Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes;Applied Physics Reviews;2024-04-17

5. Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD;AIP Advances;2024-04-01

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