Deep level defects throughout the bandgap of (010) β-Ga2O3detected by optically and thermally stimulated defect spectroscopy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941429
Reference34 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
3. Wide-bandgap semiconductor materials: For their full bloom
4. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
5. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
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