Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Author:
Affiliation:
1. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
Funder
King Abdullah University of Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5003930
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4. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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