HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD-Reference-Cited by-同舟云学术

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

Published:2018-03-06 Issue:4 Volume:18 Page:2370-2376
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Sun Haiding¹^ORCID,Li Kuang-Hui¹,Castanedo C. G. Torres¹,Okur Serdal²,Tompa Gary S.²,Salagaj Tom²,Lopatin Sergei³^ORCID,Genovese Alessandro³,Li Xiaohang¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal, 23955-6900, Saudi Arabia

2. Structured Materials Industries, Inc., Piscataway, New Jersey 08854, United States

3. King Abdullah University of Science and Technology (KAUST), Imaging and Characterization Core Laboratory, Thuwal 23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b01791

Reference37 articles.

1. Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

2. Materials and processing issues in vertical GaN power electronics

3. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. A review of Ga2O3materials, processing, and devices

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