Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties-Reference-Cited by-同舟云学术

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Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

Published:2024-08 Issue: Volume:306 Page:117485
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Labed Madani,Meftah Afak,Sengouga Nouredine^ORCID,Park Jun Hui,Kyoung Sinsu^ORCID,Kim Hojoong,Rim You Seung

Funder

Korea Institute for Advancement of Technology

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Reference27 articles.

1. An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application;Xue;Nanoscale Res. Lett.,2018

2. Introduction BT;Higashiwaki,2020

3. Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering;Labed;J. Phys. D Appl. Phys.,2021

4. Modeling and analyzing temperature-dependent parameters of Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering;Labed;Semicond. Sci. Technol.,2021

5. β -Ga2O3 for wide-bandgap electronics and optoelectronics;Galazka;Semicond. Sci. Technol.,2018

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