In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures-Reference-Cited by-同舟云学术

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In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

Published:2015-03-31 Issue:16 Volume:26 Page:164001
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Pi T W,Lin Y H,Fanchiang Y T,Chiang T H,Wei C H,Lin Y C,Wertheim G K,Kwo J,Hong M

Funder

Ministry of Science and Technology

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=16/a=164001/pdf

Reference45 articles.

1. InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

2. Considerations for Ultimate CMOS Scaling

3. Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

4. GaAs interfacial self-cleaning by atomic layer deposition

5. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

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